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       ? 2004 IXYS All rights reserved 1 - 2 IXYS reserves the right to change limits, test conditions and dimensions DSEI 19-06AS 417 TO-263 AA Outline Features ● International standard surface mount package JEDEC TO-263 AA ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values● Soft recovery behaviour ● Epoxy meets UL 94V-0 Fast Recovery Epitaxial Diode (FRED) ACTO-263 AA A=Anode,C=Cathode, NC = No connection, TAB = Cathode NC A C (TAB) VRRM = 600 V IFAVM = 20 A trr = 35 ns VRSM VRRM Type V V 600 600 DSEI 19-06AS Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 Symbol Conditions Maximum Ratings IFRMS IFAVM ① IFRM TVJ = T VJM TC = 65°C; rectangular, d = 0.5 20 A tP < 10 μs; rep. rating, pulse width limited by T VJM 150 A 25 A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A t = 8.3 ms (60 Hz), sine 110 A TVJ = 150°C; t = 10 ms (50 Hz), sine 85 A t = 8.3 ms (60 Hz), sine 95 A I2t TVJ = 45°C t = 10 ms (50 Hz), sine 50 A 2s t = 8.3 ms (60 Hz), sine 50 A2s TVJ = 150°C; t = 10 ms (50 Hz), sine 36 A 2s t = 8.3 ms (60 Hz), sine 37 A2s TVJ TVJM Tstg -40...+150 °C 150 °C -40...+150 °C Ptot TC = 25°C 61 W Weight 2g ① I FAVM rating includes reverse blocking losses at T VJM, VR = 0.8 V RRM, duty cycle d = 0.5 Data according to IEC 60747 Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C; V R = V RRM TVJ = 25°C; V R = 0.8 V RRM TVJ = 125°C; V R = 0.8 V RRM 50 μA 25 μA 3mA VF IF = 16 A; T VJ = 150°C 1.5 V TVJ= 25°C 1.7 V VT0 rT For power-loss calculations only 1.12 V TVJ = T VJM 23.2 m? RthJC 2 K/W trr IF = 1 A; -di/dt = 50 A/μs; V R = 30 V; T VJ = 25°C 35 50 ns IRM VR = 350 V; I F = 12 A; -di F/dt = 100 A/μs 4 4.4 A L ≤ 0.05 μH; T VJ = 100°C |